Reducing speckle in an excimer light source

ABSTRACT

A method includes: producing a light beam made up of pulses having a wavelength in the deep ultraviolet range, each pulse having a first temporal coherence defined by a first temporal coherence length and each pulse being defined by a pulse duration; for one or more pulses, modulating the optical phase over the pulse duration of the pulse to produce a modified pulse having a second temporal coherence defined by a second temporal coherence length that is less than the first temporal coherence length of the pulse; forming a light beam of pulses at least from the modified pulses; and directing the formed light beam of pulses toward a substrate within a lithography exposure apparatus.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.16/503,073, filed Jul. 3, 2019, now allowed, titled REDUCING SPECKLE INAN EXCIMER LIGHT SOURCE, which is a continuation of U.S. applicationSer. No. 15/407,153, filed Jan. 16, 2017, now U.S. Pat. No. 10,451,890,titled REDUCING SPECKLE IN AN EXCIMER LIGHT SOURCE, each of which isincorporated herein by reference in its entirety.

TECHNICAL FIELD

The disclosed subject matter relates to an apparatus and method forreducing speckle in an excimer light source, for example, a deepultraviolet (DUV) light source for semiconductor lithography.

BACKGROUND

In semiconductor lithography (or photolithography), the fabrication ofan integrated circuit (IC) includes performing a variety of physical andchemical processes on a semiconductor (for example, silicon) substrate(which is also referred to as a wafer). A photolithography exposureapparatus or scanner is a machine that applies a desired pattern onto atarget portion of the substrate. The wafer is irradiated by a light beamthat extends along an axial direction, and the wafer is fixed to a stageso that the wafer generally extends along a lateral plane that issubstantially orthogonal to the axial direction. The light beam has awavelength in the deep ultraviolet (DUV) range, for example, from about10 nanometers (nm) to about 400 nm.

SUMMARY

In some general aspects, a method includes producing a light beam madeup of pulses having a wavelength in the deep ultraviolet range, witheach pulse having a first temporal coherence defined by a first temporalcoherence length and each pulse being defined by a pulse duration. Forone or more pulses, the optical phase is modulated over the pulseduration of the pulse to produce a modified pulse having a secondtemporal coherence defined by a second temporal coherence length that isless than the first temporal coherence length of the pulse. The methodincludes forming a light beam of pulses at least from the modifiedpulses; and directing the formed light beam of pulses toward a substratewithin a lithography exposure apparatus.

Implementations can include one or more of the following features. Forexample, the light beam made up of pulses can be produced by: producinga seed light beam made up of pulses; and producing a light beam made upof amplified pulses by optically amplifying the pulses of the seed lightbeam by repeatedly passing the pulses of the seed light beam through aresonator. The optical phase can be modulated over the pulse duration ofa pulse by modulating the optical phase over the pulse duration of anamplified pulse to produce the modified pulse. The optical phase can bemodulated over the pulse duration of a pulse by modulating the opticalphase over the pulse duration of a pulse of the seed light beam toproduce the modified pulse; and the light beam made up of amplifiedpulses can be produced by optically amplifying the modified pulses. Thelight beam of pulses formed from the modified pulses can be directedtoward the substrate by directing the light beam made up of amplifiedpulses toward the substrate.

The method can also include reducing a bandwidth of a pulse of the lightbeam before modulating the optical phase over the pulse duration of thatpulse to produce the modified pulse. The optical phase can be modulatedover the pulse duration of a pulse to cause the bandwidth of the pulseto increase but remain within a range of a target bandwidth.

The optical phase can be modulated over the pulse duration of a pulse byconvoluting the spectrum of the electric field of the pulse by a Fouriertransform relating to modulating the optical phase over the pulseduration of the pulse. The optical phase can be modulated over the pulseduration of a pulse to thereby reduce a dynamic speckle contrast of thelight beam of pulses directed toward the substrate.

The method can also include increasing a duration of the pulses in thelight beam directed toward the substrate. The duration of the pulses inthe light beam can be increased by: splitting the amplitude of eachpulse of the light beam into split portions, introducing temporal delaysamong these split portions to produce temporally-delayed portions of thepulse, and recombining these temporally-delayed portions of the pulse toprovide a temporally stretched pulse of the light beam. The opticalphase can be modulated over the pulse duration of a pulse by modulatingthe optical phase over the pulse duration of one or more split portionsof the pulse.

The optical phase can be modulated over the pulse duration of a pulse tocause the bandwidth of the pulse of the light beam to increase.

The method can also include selecting a range of frequencies at whichthe optical phase over the pulse duration of a pulse is modulated.

The frequency range can be selected by: determining a target frequencyrange that would produce a target bandwidth of the modified pulse; andmaintaining the frequency range within the determined target frequencyrange to thereby maintain the bandwidth of the modified pulse within arange of the target bandwidth. The method can include measuring abandwidth of the pulse prior to modulating the optical phase over thepulse duration of the pulse to determine whether the modified pulsewould have a bandwidth that is within a range of the target bandwidth.The method can include measuring a bandwidth of the modified pulse priorto modulating the optical phase over the pulse duration of the nextpulse to determine whether the modified pulse has a bandwidth that iswithin a range of the target bandwidth. The method can includecalculating the target bandwidth for a particular next pulse based onthe measured bandwidth of a plurality of previously-modified pulses.

The frequency range can be selected by selecting the frequency range atwhich the optical phase over the pulse duration of a pulse is modulatedfor each pulse in the light beam.

The optical phase can be modulated over the pulse duration of a pulse bymodulating a refractive index of a material through which the pulse isdirected.

The method can include adjusting a bandwidth of the pulse that isdirected toward the substrate by adjusting a rate at which the opticalphase is modulated.

The method can include: estimating a bandwidth of the modified pulse;determining whether the estimated bandwidth is within a range of atarget bandwidth; and if it is determined that the estimated bandwidthis outside the range of a target bandwidth, then adjusting a frequencyrange at which the optical phase is modulated to thereby adjust abandwidth of the next modified pulse.

The optical phase can be modulated over the pulse duration of a pulse byrandomizing the optical phase over the pulse duration of the pulse.

The optical pulse can be associated with a waveform, the waveform beingrepresented by points in time, and the optical phase can be modulatedover the pulse duration of a pulse by applying a different temporaldelay to different points of the waveform. A different temporal delaycan be applied to different points of the waveform by passing theoptical pulse through a medium and varying an index of refraction of themedium as the pulse passes through the medium.

An amplitude of the modulation can vary randomly over the pulse durationof the pulse. An amplitude of the modulation can vary in a manner thatreduces one or more of dynamic speckle and bandwidth of the light beamof pulses directed toward the substrate.

Each pulse can have a first spatial coherence defined by a first spatialcoherence length, and the method can include reducing a spatialcoherence of the pulse as it is being modulated such that the modifiedpulse has a second spatial coherence defined by a second spatialcoherence length that is less than the first spatial coherence length ofthe pulse.

In other general aspects, an apparatus includes a light source, a phasemodulator system, a measurement apparatus, and a control system. Thelight source is configured to produce a light beam made up of pulseshaving a wavelength in the deep ultraviolet range, each pulse having afirst temporal coherence defined by a first temporal coherence lengthand each pulse being defined by a pulse duration. The phase modulatorsystem is in the path of the light beam of pulses and is configured to,for at least one pulse, modulate the optical phase over the pulseduration of the pulse to produce a modified pulse having a secondtemporal coherence defined by a second temporal coherence length that isless than the first temporal coherence length. The measurement apparatusis configured to measure a characteristic of a test pulse. A test pulseis either a pulse having the first temporal coherence or the modifiedpulse having the second temporal coherence. The control system is incommunication with the measurement apparatus and the phase modulatorsystem. The control system is configured to: receive the measuredcharacteristic of the test pulse from the measurement apparatus;determine whether a bandwidth of the modified pulse is within a range ofa target bandwidth based on the received measured characteristic; and,if it is determined that the bandwidth of the modified pulse is outsidethe range of the target bandwidth, then adjusting a frequency at whichthe optical phase over the pulse duration of the pulse that produces themodified pulse is modulated.

Implementations can include one or more of the following features. Forexample, the apparatus can include a beam directing apparatus in thepath of a light beam of pulses formed from the modified pulses. The beamdirecting apparatus can be configured to direct the light beam of pulsesformed from the modified pulses toward a substrate within a lithographyexposure apparatus. The phase modulator system can be within thelithography exposure apparatus. The phase modulator system can include atwo-dimensional array of phase modulators. The two-dimensional array ofphase modulators can be positioned within a beam homogenizer. Thetwo-dimensional array of phase modulators can also be configured to, foreach pulse, reduce a spatial coherence of the pulse so that the modifiedpulse has a second spatial coherence that is less than the spatialcoherence of the pulse.

The light source can include: a first stage light source configured toproduce a seed light beam made up of pulses and including a spectraltuning apparatus for tuning one or more spectral features of the seedlight beam, and a second stage optical amplifier having a resonator witha gain medium, the optical amplifier configured to receive the pulses ofthe seed light beam and produce a light beam made up of amplifiedpulses. The first stage light source can be configured to produce theseed light beam made up of pulses includes a solid state gain medium.The phase modulator system can be between the first stage light sourceand the second stage optical amplifier.

The test pulse can be a modified pulse.

The control system can be in communication with the light source, andthe control system can be configured to, if it is determined that thebandwidth of the modified pulse falls outside the target bandwidthrange, send a signal to the light source to adjust the bandwidth of thepulses.

The characteristic of the test pulse that is measured by the measurementapparatus can be the bandwidth of the test pulse.

The apparatus can include an optical temporal pulse stretcher configuredto increase a duration of the modified pulses. The optical temporalpulse stretcher can be a passive optical element.

The phase modulator system can include a Pockels cell including a mediumthrough which the light beam of pulses passes. The optical phase can bemodulated over the pulse duration of a pulse by modulating the index ofrefraction of the medium of the Pockels cell.

The phase modulator system can include a single phase modulator or aplurality of phase modulators.

DESCRIPTION OF DRAWINGS

FIG. 1 is a block diagram of a photolithography system producing apulsed light beam that is directed to a photolithography exposureapparatus;

FIG. 2 is a graph of an exemplary optical spectrum of the pulsed lightbeam produced by the photolithography system of FIG. 1 ;

FIG. 3 is a graph of an exemplary optical spectrum of the pulsed lightbeam, in which the optical spectrum includes unwanted structures;

FIG. 4 is a graph of an exemplary interference visibility for theoptical spectrum of FIG. 3 ;

FIG. 5 is a block diagram of an exemplary phase modulator system of FIG.1 ;

FIG. 6 is a graph of an exemplary optical spectrum of a modified pulsedlight beam output from the phase modulator system of FIG. 5 ;

FIG. 7 is a graph of an exemplary interference visibility for theoptical spectrum of FIG. 6 ;

FIG. 8A is a graph of an exemplary phase modulation applied to a pulseof the pulsed light beam as a function of time;

FIG. 8B is a graph of the frequency content of the exemplary phasemodulation of FIG. 8A;

FIG. 9 is a block diagram of an exemplary phase modulator system thatincludes one or more phase modulators;

FIG. 10 is a block diagram of an exemplary phase modulator system inwhich the one or more phase modulators are optically arranged in series;

FIG. 11 is a block diagram of an exemplary phase modulator system inwhich the one or more phase modulators are optically arranged inparallel;

FIG. 12 is a block diagram of an exemplary phase modulator of the phasemodulator system, in which the exemplary phase modulator is designed asa Pockels cell;

FIG. 13A is a block diagram of an exemplary photolithography system inwhich the phase modulator system is placed within an optical source;

FIG. 13B is a block diagram of an exemplary optical source into whichthe phase modulator system is placed;

FIG. 14 is a block diagram of an exemplary photolithography system inwhich the phase modulator system is placed within a beam preparationsystem between the optical source and the photolithography exposureapparatus;

FIG. 15A is a block diagram of an exemplary photolithography system inwhich the phase modulator system is placed within an optical temporalpulse stretcher of the beam preparation system between the opticalsource and the photolithography exposure apparatus;

FIG. 15B is a block diagram of an exemplary optical temporal pulsestretcher into which the phase modulator system is placed;

FIG. 16A is a block diagram of an exemplary photolithography system inwhich the phase modulator system is placed within an optical arrangementof the photolithography exposure apparatus;

FIG. 16B is a block diagram of an exemplary optical arrangement withinwhich the phase modulator system is placed;

FIG. 17A is a block diagram of an exemplary photolithography exposureapparatus;

FIG. 17B is a block diagram of an exemplary illumination module withinthe photolithography exposure apparatus of FIG. 17A;

FIG. 18 is a block diagram of an exemplary spectral feature measurementsystem within the photolithography system of FIG. 1 ;

FIG. 19 is a block diagram of an exemplary optical source within thephotolithography system of FIG. 1 ;

FIG. 20 is a block diagram of an exemplary spectral feature selectionsystem within the photolithography system of FIG. 1 ;

FIG. 21 is a block diagram of an exemplary control system within thephotolithography system of FIG. 1 ;

FIG. 22 is a flow chart of an exemplary procedure performed by thephotolithography system for reducing a temporal coherence of pulses ofthe light beam; and

FIG. 23 is a flow chart of an exemplary procedure performed by thephotolithography system for selecting a frequency range at which theoptical phase over the pulse duration of a pulse is modulated to therebyreduce the temporal coherence of the pulse.

DESCRIPTION

Referring to FIG. 1 , a photolithography system 100 includes an opticalsource 105 (such as an excimer light source) that produces a light beam110 of pulses, under control of a control system 185. The pulses of thelight beam 110 have a wavelength that is nominally at a centerwavelength in the deep ultraviolet (DUV) range, for example, betweenabout 10 nanometers (nm) to about 400 nm. In some implementations, thewavelength of the pulses is about 248 nm while in other implementations,the wavelength of the pulses is about 193 nm. The optical source 105emits light in the form of optical pulses, rather than a continuouswave. Thus, the optical source 105 emits pulses of energy that have ashort time duration. These periodic pulses can be considered a pulsetrain and form the light beam 110. The duration of a pulse (also calledthe pulse width or length) can be defined as the time during which thepower of the pulse remains continuously above a percentage (for examplea half) of its maximum value.

The light beam 110 is directed to a photolithography exposure apparatus(or scanner) 115 by way of a beam preparation system 112 that caninclude beam directing and beam modification optics. Specifically,within the photolithography exposure apparatus 115, the pulsed lightbeam 110 is directed through an optical arrangement 113, which isconfigured to prepare and modify the light beam 110 as needed beforedirecting the light beam 110 toward a semiconductor substrate (wafer)120 on a wafer stage 121. The light beam 110 and the wafer 120 arescanned (moved) relative to each other under the control of alithography controller 140 to thereby pattern microelectronic featureson the wafer 120. The size of the microelectronic features patterned onthe wafer 120 depends on the wavelength of the light beam 110, with alower wavelength resulting in a smaller minimum size of themicroelectronic feature. When the wavelength of the light beam 110 is248 nm or 193 nm, the minimum size of the microelectronic features canbe, for example, 50 nm or less. The focus location of the pulses of thelight beam 110 at the wafer 120 correlates with the wavelength of thelight beam 110. Moreover, the bandwidth of the light beam 110 can impactthe critical dimension (CD) of these features.

Various disturbances (such as, for example, temperature gradients,pressure gradients, optical distortions) act on the optical source 105and the light beam 110 to modify characteristics such as the spectralproperties or features (such as the bandwidth and the wavelength) or theenergy of the light beam 110. For example, chromatic aberration causedby optical components that interact with the light beam 110 can cause anincrease in the bandwidth of the light beam 110. Thus, thephotolithography system 100 includes other components, such as, forexample, a spectral feature selection system 130 (which is configured toadjust one or more spectral features of the light beam 110) and ametrology system 170 (which is configured to measure one or morecharacteristics of the light beam 110). Along with the control system185, these components are used in combination to determine the impact ofthe disturbances on the light beam 110 and to correct for the effect ofsuch disturbances on the light beam 110.

Due to the design of the optical source 105, the pulses of the lightbeam 110 have coherence, both temporal coherence and spatial coherence,and this coherence (either or both temporal and spatial) can lead to aspeckle pattern at the wafer 120. A speckle pattern is an intensitypattern produced by the mutual interference of a set of wavefronts ofthe light beam 110, and the interference is higher with higher levels ofcoherence, both temporal coherence and spatial coherence. Specklepatterns produced at the wafer 120 are unwanted because they can lead toa reduction in CD uniformity (CDU) and therefore lead to a blurring ofthe microelectronic features produced on the wafer 120.

Static speckle is caused by spatial coherence in the light beam 110 anddynamic speckle is caused by temporal coherence in the light beam 110.The photolithography system 100 includes a phase modulator system 145which is placed in the path of a light beam of pulses. The phasemodulator system 145 is configured to, for each pulse, produce amodified pulse that has a temporal coherence that is less than thetemporal coherence of the pulse that enters the phase modulator system145 to thereby reduce the dynamic speckle that arises at the wafer 120.The phase modulator system 145 can be placed in the path of the lightbeam 110 output from the optical source 105 or it can be placed in thepath of a light beam such as a seed light beam produced within theoptical source 105, as discussed below. The light beam 110 of pulses isformed from these modified pulses (which have a reduced temporalcoherence); and this formed light beam 110 of pulses is directed towardthe wafer 120 within the photolithography exposure apparatus 115.

Referring to FIG. 2 , each pulse of the light beam 110 exhibits anoptical spectrum 200. The optical spectrum 200 can be referred to as thespectral shape or spectrum of the light beam 110. The optical spectrum200 contains information about how the optical energy or power of thelight beam 110 is distributed over different wavelengths (orfrequencies) 202. The optical spectrum 200 of the light beam 110 isdepicted in the form of a diagram in which the spectral intensity 201 isplotted as a function of the wavelength or optical frequency 202.Spectral properties or features of the light beam 110 include any aspector representation of this optical spectrum 200. For example, bandwidthis a spectral feature. The bandwidth of the light beam 110 is a measureof the width W of this optical spectrum 200, and this width W can begiven in terms of wavelength or frequency of the laser light. Anysuitable mathematical construction (for example, metric) related to thedetails of the optical spectrum 200 can be used to estimate a value thatcharacterizes the bandwidth of the light beam. For example, the fullwidth of the optical spectrum 200 at a fraction (X) of the maximum peakintensity of the spectral shape (referred to as FWXM) can be used tocharacterize the light beam bandwidth. As one example, in a commonlyused spectral-shape characterization, the fraction X is 50% and therespective metric is referred to as the full width at half maximum(FWHM). As another example, the width of the optical spectrum 200 thatcontains a fraction (Y) of the integrated spectral intensity (referredto as EY) can be used to characterize the light beam bandwidth. In oneexample, in common use for characterizing the spectral properties of thelight beam 110, the fraction Y is 95%.

The pulses of the light beam 110 have temporal coherence becauselongitudinal cavity modes are produced by the geometry and configurationof the resonator or resonators within the optical source 105, and theselongitudinal cavity modes interfere with each other and produce unwantedstructures in the optical spectrum of each pulse. An exemplary opticalspectrum 300 having unwanted structures is depicted schematically inFIG. 3 . Moreover, each pulse of the light beam 110 can producedifferent unwanted structures. The bandwidth of a pulse of the lightbeam 110 can be measured (with, for example, the metrology system 170)by averaging over the number of pulses that the photolithographyexposure apparatus 115 uses to illuminate a single position on the wafer120. The averaged value of the bandwidth is an effective bandwidth andit can be a smooth function of the wavelength.

The amount of temporal coherence of a pulse is a measure of the averagecorrelation between the value of the electric field waveform of thepulse and itself delayed by an amount τ, at any pair of times. The delayover which the phase of the electric field waveform wanders by asignificant amount (and hence the correlation decreases by a significantamount) is defined as the coherence time T_(C). At a delay τ of 0, thedegree of coherence is perfect but the degree of coherence dropssignificantly as the delay τ approaches T_(C). The temporal coherencecan be measured in an interferometer such as a Michelson interferometer,in which the electric field waveform of the pulse is combined with acopy of itself that is delayed by a time τ. A detector measures thetime-averaged intensity of the light exiting the interferometer, and theresulting interference visibility gives the temporal coherence at thedelay τ. An exemplary interference visibility 400 is shown in FIG. 4 forthe optical spectrum 300 of FIG. 3 . The interference visibility iscalculated as the Fourier transform of the normalized power spectraldensity of the pulse, and the coherence time T_(C) (from which thecoherence length can be calculated) is calculated asT _(C)=∫|visibility|² dτ.

The coherence length L_(C) can be calculated from the coherence timeT_(C); specifically, the coherence length L_(C) is the distance that thepulse wave travels in the coherence time T_(C). In the example of FIGS.3 and 4 , the coherence length L_(C) is unacceptably high. Thestructures in the optical spectrum 300 (FIG. 3 ) of each pulse of thelight beam 110 causes the side bands in the visibility (FIG. 4 ), andtherefore leads to a larger temporal coherence length L_(C) than onewould expect based on slit-average bandwidth. By passing the pulsethrough the pulse modulator system 145, the coherence length L_(C) ofthe pulse is reduced to an acceptable level, as discussed with referenceto FIGS. 5-7 .

Referring to FIG. 5 , in particular, a pulse 505 that enters the phasemodulator system 145 has a first temporal coherence that is defined by afirst temporal coherence length L_(C1). For example, the pulse 505 thatenters the phase modulator system 145 could be the pulse that exhibitsthe unwanted structures in the optical spectrum 300 (and also has agreater-than-desired temporal coherence length L_(C) such as shown inFIG. 4 ). The phase modulator system 145 reduces the temporal coherenceof the pulse 505 by modulating the optical phase over the pulse durationof the pulse 505 to produce a modified pulse 510 having a secondtemporal coherence defined by a second temporal coherence length L_(C2)that is less than the first temporal coherence length L_(C1). Theelectric field of the modified pulse 510 can be described as amultiplication of electric field of the incoming pulse 505 times thephase rotation or delay introduced by the phase modulator system 145.The optical spectrum of the electric field of the modified pulse 510 isconvoluted or averaged by the Fourier transform of the phase modulationprovided by the phase modulator system 145.

The second temporal coherence length L_(C2) can be a fraction orpercentage of the first temporal coherence length L_(C1). For example,the second temporal coherence length L_(C2) can be between 50-95% of thefirst temporal coherence length L_(C1). Such a reduction in temporalcoherence length can lead to an overall reduction in speckle at thewafer 120 of between 5-30%, for example, about 18%. As discussed belowin greater detail, the amount by which the temporal coherence is reducedis limited by other characteristics (such as the bandwidth) of thepulse) that are impacted by performing a phase modulation on the pulse.

An exemplary modified optical spectrum 600 of the modified pulse 510 isshown in FIG. 6 , and the interference visibility 700 of the modifiedoptical spectrum 600 is shown in FIG. 7 . The structures present in theoptical spectrum 300 have mostly been removed or greatly reduced in themodified optical spectrum 600. Moreover, the temporal coherence lengthL_(C) of the modified optical spectrum 600 (and the modified pulse 510)is reduced relative to the coherence length L_(C) of the incoming pulse505. Specifically, the temporal coherence length L_(C) of the modifiedoptical spectrum 600 is calculated based on the temporal coherence timeT_(C), which is calculated from the interference visibility 700 shown inFIG. 7 .

In general, the temporal coherence length of a pulse is inverselyproportional to the instantaneous bandwidth of the pulse. Thus, ingeneral, if the temporal coherence length is reduced (by performing thephase modulation discussed herein), then the instantaneous bandwidth ofthe pulse 510 at the output of the phase modulator system 145 increasesrelative to the instantaneous bandwidth of the pulse 505 at the input ofthe phase modulator system 145. However, as discussed herein, theoverall slit-averaged bandwidth (the bandwidth seen by the wafer 120)remains constant or within a range of acceptable bandwidths for tworeasons. First, the bandwidth of the incoming pulses 505 is reduced tooffset some of the shift to the instantaneous bandwidth of the outgoingpulses 510. Second, the wafer 120 experiences the slit-averagedbandwidth, which is not affected by the shifts in the instantaneousbandwidth on a pulse to pulse basis because the values of shifts areaveraged out over the slit.

Referring to FIG. 8A, an exemplary phase modulation 800 is shown. InFIG. 8A, the phase modulation shows an amplitude of the phase that isapplied to the pulse 505 as a function of time. The frequency of thephase modulation is the rate at which the optical phase of the pulse ismodified or delayed. Thus, the frequency f can be considered as 1/Δt,where Δt is the time between the peaks of the phase modulation. Inpractice, a range of frequencies is applied to the phase modulatorsystem 145. FIG. 8B shows the frequency content of the phase modulation800 applied to the pulse 505. Specifically, FIG. 8B can be considered asthe Fourier transform of the phase modulation 800. In this example, asshown, many frequencies are applied and the limiting value of thefrequency is 1 in arbitrary units (for example, 1 GHz). The limitingvalue of the frequency (which is the maximum allowed frequencypermitted) can be changed by filtering so as to change the frequencycontent of the phase modulation 800. As the maximum allowed frequency ofthe phase modulation is increased and thus, a greater range offrequencies is applied, the bandwidth of the modified pulse 510increases. Thus, the maximum allowed frequency of the phase modulationis selected (for example, by signal filtering) so as to not increase thebandwidth of the modified pulse 510 beyond a target bandwidth.

Referring to FIG. 9 , an exemplary phase modulator system 945 includesone or more phase modulators 945A, 945B, 945C, etc. In an implementationin which the phase modulator system 945 includes a plurality of phasemodulators 945A, 945B, 945C, etc., then the phase modulators 945A, 945B,945C, etc. can be optically arranged in series so that each pulse passesin series (or sequentially) through each of the phase modulators 945A,945B, 945C, etc. Such an arrangement is shown in FIG. 10 . In thisarrangement, it is possible to have other optical elements arrangedbetween two or more of the phase modulators 945A, 945B, 945C, etc.

On the other hand, in the implementation in which the phase modulatorsystem 945 includes a plurality of phase modulators 945A, 945B, 945C,etc., then the phase modulators 945A, 945B, 945C, etc. can be opticallyarranged in parallel so that a portion of each pulse passes through oneof the phase modulators 945A, 945B, 945C, etc. and each portion passesthrough a phase modulator 945A, 945B, 945C, etc. simultaneously. Such anarrangement is shown in FIG. 11 , which shows six phase modulators 945A,945B, 945C, 945D, 945E, 945F arranged in parallel. Such an arrangementcould be a two dimensional array of phase modulators, in which the arrayextends along a direction that is transverse to the direction of thepulse 505.

Referring to FIG. 12 , an exemplary phase modulator 1245 i can bedesigned as a Pockels cell 1246. The Pockels cell 1246 includes anelectro-optic crystal 1247 through which a pulse 1205 (such as the pulse505) propagates. The phase delay in the crystal 1247 can be modulated byapplying a variable electric voltage to electrodes 1248, 1249 that areconnected to the crystal 1247. The electrodes 1248, 1249 are connectedto a voltage source 1257, which is controlled by the control system 185.Exemplary voltages applied to the crystal 1247 range from a kilovolt toseveral or tens of kilovolts. The refractive index of the electro-opticcrystal 1247 changes in proportion to the electric field that is appliedby the electrodes 1248, 1249, and the refractive index changes with therefractive index. Thus, by changing or modulating the refractive indexin the crystal 1247, the phase delay is modulated.

The geometric arrangement of the electrodes 1248, 1249 within thePockels cell 1246 governs how the electric field is arranged relative tothe direction at which the pulse 505 travels. For example, the Pockelscell 1246 can be a longitudinal device in which the electrodes 1248,1249 are arranged at the input face 1251 and output face 1252 of thecrystal 1247 and in this case, the electric field that is produced isalong the longitudinal direction, which is parallel with the directionof the pulse 505. As another example, the Pockels cell 1246 can be atransverse device in which the electrodes 1248, 1249 are arranged at oneor more sides 1253, 1254 of the crystal 1247, and in this case, theelectric field that is produced is along the transverse direction, whichis perpendicular to the direction of the pulse 505.

The crystal 1247 is made of a material that changes it refractive indexby controlling the electric field through the crystal 1247 using theelectrodes 1248, 1249. The material of the crystal 1247 should betransmissive at the wavelength of the pulse 1205, and thus, it should betransmissive to DUV light. Moreover, the material of the crystal 1247should be made of a material that has a high threshold for opticaldamage because the pulses 1205 that pass through the crystal 1247 havehigh optical powers. For example, with reference to FIG. 19 , the pulsesin a seed light beam 1910A output by a master oscillator (MO) 1900 canbe about 1-6 Watts (W) (for example, at a pulse repetition rate of 6000Hz, each pulse has an instantaneous energy of 1 millijoules (mJ)) whilethe pulses in the light beam 110 at the output of the power amplifier1925 can be about 10-200 W. For example, the crystal 1247 can be made ofpotassium dihydrogen phosphate (KDP), deuterated KDP (DKDP), ammoniumdihydrogen phosphate (ADP), beta-barium borate (BBO), or quartz.

Referring to FIGS. 13A and 13B, in some implementations, the phasemodulator system 145 is placed inside the optical source 105.Specifically, the optical source 105 can be designed as a dual stageoptical source 1305, and in this case it can be beneficial to place thephase modulator system 145 between a first stage light source 1300 and asecond stage optical amplifier 1310 and in the path of a seed light beam1310A of pulses produced by the first stage light source 1300. Such adual stage design separates the power generator (the second stageoptical amplifier 1310) from the bandwidth and wavelength controlgenerator (the first stage light source 1300). The power of the seedlight beam 1310A is much lower than the power of the light beam 110output from the second stage optical amplifier 1310. Thus, by placingthe phase modulator system 145 in the path of the seed light beam 1310A,the fluence and power levels of the pulses entering the modulator system145 are smaller (relative to those of the output light beam 110) andreduce the chance of damage to the materials within the phase modulatorsystem 145.

Referring to FIG. 14 , in other implementations, the phase modulatorsystem 145 is placed inside the beam preparation system 112 and in thepath of the light beam 110 of pulses as they travel through the beampreparation system 112.

For example, with reference to FIGS. 15A and 15B, the phase modulatorsystem 145 is placed inside an optical temporal pulse stretcher 114within the beam preparation system 112. The temporal pulse stretcher 114is configured to increase a duration of the pulses that pass through it.The temporal pulse stretcher 114 optically acts on the pulse of thelight beam 110 to increase a duration of the pulse without introducingsignificant losses so that the peak power of the light beam 110 isreduced without reducing its average power. The temporal pulse stretcher114 is an optical and passive configuration of optical elements thatsplit the amplitude of the pulse of the light beam 110 into splitportions 1503 with one or more beam separators 1501, introduce opticaldelays 1502 among these split portions, and then recombine (for example,using the beam separator 1501) these temporally-delayed portions of thepulse to provide a temporally stretched pulse of the light beam 110 atthe output. The temporal pulse stretcher 114 can therefore includeoptical components such as beam splitters (for the beam separator 1501)and reflective optics (that form the optical delay 1502). The reflectiveoptics can be flat mirrors or curved (for example, concave or convex)mirrors that could be confocal. The delay introduced in the splitportion of the pulse produced by the temporal pulse stretcher 114 isequal to or longer than the fast temporal component of the light beam110. The phase modulator system 145 can be placed into the split portionof the pulse of the light beam 110. By applying the optical phasemodulation to the pulse of the light beam 110 within the split portion,the fluence levels on the phase modulator system 145 can be lower (by,for example, 50% of the fluence level of the light beam 110 that is notsplit off). Moreover, by placing the phase modulator system 145 in thesplit portion of the pulse of the light beam 110, recombined portions ofthe pulse within the temporal pulse stretcher 114 can be madeindependent of one another and thereby reduce the temporal coherence ofthe pulses. Specifically, the phase modulator system 145 acts on thesplit and delayed portions of the pulse and ensures that these splitportions are incoherent with the un-delayed portions before recombining.

Referring to FIGS. 16A and 16B, in other implementations, the phasemodulator system 145 is placed inside the optical arrangement 113 withinthe photolithography exposure apparatus 115. Details about thephotolithography exposure apparatus 115 are provided next, beforediscussing the placement and configuration of the phase modulator system145 within the optical arrangement 113.

Referring to FIG. 17A, the optical arrangement 113 includes, among otherfeatures, the illumination module 1702, a reticle stage including areticle or mask 1734, a projection stage 1704 including, among otheroptics, one or more projection lenses 1730. The mask 1734 is movablealong one or more directions, such as along an optical axis 1738 of thepulsed light beam 110 or in a plane that is perpendicular to the opticalaxis 1738. The projection stage 1704 includes a projection lens 1730 andenables the image transfer to occur from the mask 1734 to thephotoresist on the wafer 120.

The illumination module 1702 creates the pupil shape, that is, thecondition and shape of the light beam 110 before it interacts with themask 1734. For example, the illumination module 1702 adjusts the rangeof angles for the light beam 110 impinging on the mask. The illuminationmodule 1702 includes a device 1732 that conditions the light beam 110and causes the light beam 110 to take on the prescribed shape before itinteracts with the mask 1734. For example, the device 1732 can includean array of individually adjustable micro-mirrors that can create thepupil shape in rapid fashion (for example, in seconds or minutes). Thearray can include hundreds or thousands of micro-mirrors and can beprogrammable. Moreover, the device 1732 can include a field definingelement (FDE). The micro-mirrors of the array can be used to illuminatecertain positions of the entrance plane of the FDE. The FDE convertseach individual position in its entrance plane to an angle on thereticle level while simultaneously creating a uniform illumination spot.Thus, by changing the micro-mirrors, any angle distribution (or pupil)at the reticle level can be made to have a uniform intensitydistribution.

The illumination module 1702 also includes a beam homogenizer 1736 thathomogenizes (makes uniform) the intensity distribution of the pulsedlight beam 110 across the mask 1734. Referring to FIG. 17B, the beamhomogenizer 1736 can include a pair of two dimensional lenslet arrays1742, 1744 and a condenser lens 1746 to provide a uniform irradiance atan illumination plane 1748 (which can be at or within the device 1732).The first lenslet array 1742 with which the light beam 110 interacts canbe considered an objective array and the second lenslet array 1744 withwhich the light beam 110 interacts can be considered a field array. Theobjective array images the source at the field array, and the fieldarray reimages all of the fields with the condenser lens so that theyoverlap at the illumination plane and create a uniform irradiance. Thetwo dimensional lenslet arrays 1742, 1744 include a plurality oflenslets (small lenses) arranged in a plane that extends perpendicularlyto the optical axis 1738.

The lithography apparatus 115 can include, among other features, alithography controller 140, air conditioning devices, and power suppliesfor the various electrical components. The lithography controller 140controls how layers are printed on the wafer 120.

The wafer 120 is irradiated by the light beam 110. A process program orrecipe determines the length of the exposure on the wafer 120, the mask1734 used, as well as other factors that affect the exposure. Duringlithography, a plurality of pulses of the light beam 110 illuminates thesame area of the wafer 120 to form an illumination dose. The number ofpulses N of the light beam 110 that illuminate the same area can bereferred to as an exposure window or slit and the size of this slit canbe controlled by an exposure slit (not shown) placed before the mask1734. The slit can be designed like a shutter and can include aplurality of blades that can be opened and closed; and the size of theexposed area is determined by the distance between the blades in thenon-scanning direction and also by the length (the distance) of the scanin the scanning direction. In some implementations, the value of N is inthe tens, for example, from 10-100 pulses. In other implementations, thevalue of N is greater than 100 pulses, for example, from 100-500 pulses.One or more of the mask 1734, the projection stage 1704, and the wafer120 can be moved relative to each other during the exposure to scan theexposure window across an exposure field. The exposure field is the areaof the wafer 120 that is exposed in one scan of the exposure slit orwindow.

As mentioned above, the phase modulator system 145 can be placed insidethe optical arrangement 113 within the photolithography exposureapparatus 115. The phase modulator system 145 can be placed in theillumination module 1702. For example, as shown in FIG. 16B, the phasemodulator system 145 is placed inside the beam homogenizer 1736.

In some implementations, the phase modulator system 145 is placed nearone of the two dimensional lenslet arrays 1742, 1744 or between the twodimensional lenslet arrays 1742, 1744. In this example, the phasemodulator system 145 can be a two dimensional array of phase modulators1745 (only one of which is labeled in FIG. 16B for clarity) opticallyarranged in parallel with each other. Such a design is similar to thatshown in FIG. 11 . The phase modulators 1745 are arranged in a planethat extends along the direction perpendicular to the optical axis 1738while the pulses of the light beam 110 travel through the phasemodulators 1745 along the direction of the optical axis 1738. Moreover,the number of phase modulators in the array of the phase modulatorsystem 145 can correspond to the number of lenslets in the arrays 1742,1744 and each phase modulator 1745 aligns with a pair of lenslets fromrespective arrays 1742, 1744. By placing the phase modulator system 145within the beam homogenizer 1736, speckle can be reduced even morebecause correlation present between the lenslets of the arrays 1742,1744 can be reduced or removed.

In other implementations, the phase modulator system 145 can be placedbetween the lenslet array 1744 and the condenser lens 1746 or before thelenslet array 1742. In other implementations, the phase modulator system145 is placed in the device 1732 or close to the array of individuallyadjustable micro-mirrors. The phase modulator system 145 can be placedon top of or in close proximity of a focusing array of lenses (notshown) that focus the light from the beam homogenizer 1736 on eachindividual micro-mirrors of the device 1732 to ensure that no lightspills over the micro-mirrors. For example, the phase modulator system145 can be placed between the beam homogenizer 1736 and the focusingarray of lenses in the device 1732.

Because of the disturbances, the actual spectral feature (such as thebandwidth or the wavelength) of the pulses of the light beam 110 at thewafer 120 may not correspond to or match with the desired spectralfeature. Thus, the metrology system 170 measures or senses the actualspectral feature (such as a bandwidth or the wavelength) of light beam110 during operation of the optical source 105 by estimating a value ofa metric from a measured optical spectrum 200 (shown in FIG. 2 ). Anoperator or an automated system (for example, the control system 185)can use the measured or sensed bandwidth of the light beam 110 to adjustthe properties of the optical source 105 (for example, by sending asignal to the spectral feature selection system 130) and to therebyadjust the optical spectrum (and the spectral features) of the lightbeam 110. The control system 185 receives the output of the metrologysystem 170 and analyzes the sensed spectral profile and estimates one ormore spectral features of the light beam 110 based on this analysis.

Referring to FIG. 18 , the metrology system 170 includes a spectralfeature measurement system 1801 having a beam separator 1860 and adiagnostic apparatus 1865. The diagnostic apparatus 1865 receives apulsed light beam 110′ that is separated from the light beam 110 by thebeam separator 1860. The beam separator 1860 is placed in a path betweenthe optical source 105 and the photolithography exposure apparatus 115.The beam separator 1860 directs the pulsed light beam 110′ (which is afirst portion or percentage of the pulsed light beam 110) into thediagnostic apparatus 1865 and directs a second portion or percentage ofthe pulsed light beam 110 toward the photolithography exposure apparatus115. In some implementations, the majority of the pulsed light beam 110is directed in the second portion toward the photolithography exposureapparatus 115. For example, the beam separator 1860 directs a fraction(for example, 1-2%) of the pulsed light beam 110 into the diagnosticapparatus 1865 and thus the pulsed light beam 110′ has about 1-2% of thepower of the pulsed light beam 110. The beam separator 1860 can be, forexample, a beam splitter.

The diagnostic apparatus 1865 includes a spectral detection system 1810that measures the spectral feature or features (such as the bandwidthand/or the wavelength) of the pulsed light beam 110 based on informationabout the optical spectrum 200 of the pulsed light beam 110′. Asdiscussed herein, the spectral detection system 1810 include aspectrometer 1848 (such as an etalon spectrometer) that interacts withthe pulsed light beam 110′ and outputs spatial components thatcorrespond to the spectral components of the light beam 110′, and asensor 1850 that estimates the spectral feature or features based on theoutputted spatial components.

In order to uniformly sample the spectral content of the light beam 110′at the sensor 1850, to evenly distribute the intensity of the light beam110′ at the sensor 1850, and to provide a more accurate measurement ofthe spectral feature from the sensor 1850, the diagnostic apparatus 1865includes a beam preparation system 1800 that includes, among otherfeatures, a beam homogenizer 1805. The beam homogenizer 1805 reducesspeckle noise and improves beam homogenization of the pulsed light beam110′ impinging upon the sensor 1850 of the spectral detection system1010.

The beam preparation system 1800 can include other elements orcomponents for modifying aspects of the pulsed light beam 110′. Forexample, the beam preparation system 1800 can also include one or morepulse stretcher systems, one or more diffuser systems, and one or morespatial adjustment systems. The pulse stretcher system is a pulsestretcher that optically acts on the pulsed light beam 110′ to increasea duration of the pulses in the pulsed light beam 110″ withoutintroducing significant losses so that the peak power of the light beam110′ is reduced without reducing its average power. The diffuser systemincludes one or more optical elements that are configured to evenlydiffuse the pulsed light beam 110′. The diffuser system causes the lightbeam 110′ to spread evenly across a plane transverse to the directionalong which the light beam 110′ travels, thus minimizing or removinghigh intensity bright spots. The diffuser system can alter the angulardivergence of the pulsed light beam 110′. The diffuser system smoothsout or otherwise mitigates diffraction spikes that can sometimes beproduced within the beam homogenizer. The diffuser system can be amicrolens array or a diffractive optic (which can be transmissive orreflective). The spatial adjustment system works to refract the pulsedlight beam 110′ to spread out the spacing between diffraction spikesthat can be created within the beam homogenizer. The spatial adjustmentsystem can be a lens that is positioned so that its focal plane overlapsa beam homogenization plane produced by the beam homogenizer.

The spectral detection system 1810 includes an aperture 1849 throughwhich the pulsed light beam 110′ is directed, as well as an input lens1862, an optical frequency separation apparatus (such as an etalon)1863, and an output lens 1864. The aperture 1849 can be placed at afocal plane of the input lens 1862 so that each point from the focalplane acts as a point source and accordingly, the input lens 1862 actsto collimate the pulsed light beam 110′ before entering the etalon 1863.The output lens 1864 is positioned at the exit of the etalon 1863 sothat the focal plane of the output lens 1864 overlaps the active area ofthe sensor 1850.

In some implementations, the etalon 1863 includes a pair of partiallyreflective glass or optical flats 1863A, 1863B, which can be spaced ashort distance (for example, millimeters to centimeters) apart, with thereflective surfaces facing each other. In other implementations, theetalon 1863 includes a single plate with two parallel reflectingsurfaces. The flats 1863A, 1863B can be made in a wedge shape to preventthe rear surfaces from producing interference fringes; the rear surfacesoften also have an anti-reflective coating. As the pulsed light beam110′ passes through the paired flats 1863A, 1863B, it is multiplyreflected, and produces a plurality of transmitted rays, which arecollected by the output lens 1864 and brought to the active region ofthe sensor 1850. The spectral detection system 1810 also can include anoptical relay, as needed, between the output lens 1864 and the sensor1850 to ensure that the sensor 1850 is at the focal plane of the outputlens 1864.

The etalon 1863 interacts with the light beam 110′ and outputs aplurality of spatial components 1874 (which is shown in schematic formin FIG. 18 ) that correspond to the spectral components of the pulsedlight beam 110′. The spectral components of the light beam 110′ are inthe optical spectrum 1872 of the pulsed light beam 110′; therefore, theycorrespond to how the values of the optical energy or power (thespectral intensity) of the pulsed light beam 110′ are distributed overthe different wavelengths. The spatial components 1874 correspond tothese intensities mapped into a two-dimensional space. Thus, the etalon1863 transforms the spectral information (such as the wavelength) of thepulsed light beam 110′ into spatial information that can be sensed ordetected by the sensor 1850. The transformation maps the spectralinformation (such as the wavelength) to different positions in space sothat the spectral information that can be observed by the sensor 1850.

The etalon 1863 produces as the spatial components 1874 an interferencepattern that takes the appearance of a set of concentric rings. Theinterference pattern takes the appearance of a more uniform intensitydistribution if the intensity distribution of the pulsed light beam 110′on the aperture 1849 is more uniform. In particular, the sharpness ofthe rings depends on the reflectivity of the flats 1863A, 1863B of theetalon 1863. Thus, if the reflectivity of the flats 1863A, 1863B is high(such that the etalon has a high quality (Q) factor), when the pulsedbeam 110′ is a monochromatic light beam, the etalon 1863 produces a setof narrow bright rings against a dark background. The transmission ofthe etalon 1863 as a function of wavelength is shown in the resultingfringe pattern 1871, which produces the optical spectrum 1872 that isdirected to the control system 185. The complete interference pattern isnot needed to perform the calculations or estimates; it is alternativelypossible to generate only fringes within a region that is slightlylarger than an active area of the sensor 1850. The sensor 1850 receivesand senses the output spatial components 1874. The sensor 1850 can bedefined by a plane that indicates generally the active area of itssensing region. The plane of the sensing region can be perpendicular tothe direction of propagation of the spatial components 1874.

The sensor 1850 can be a detector that receives and senses the outputspatial components 1874. For example, one type of suitable detector thatcan be used to measure along one dimension is a linear photodiode array.The linear photodiode array is consists of multiple elements of the samesize, formed in a linear arrangement at an equal spacing in one package.The photodiode array is sensitive to the wavelength of the light beam110′, and if the light beam 110′ has a wavelength in the deepultraviolet range, then the photodiode array is sensitive to lighthaving a wavelength in the deep ultraviolet range. As another example,the sensor 1850 can be a two dimensional sensor such as atwo-dimensional charged coupled device (CCD) or a two-dimensionalcomplementary metal oxide semiconductor (CMOS) sensor. The sensor 1850should be able to read out data at a fast enough rate, for example, atabout 6 kHz.

The control system 185 is connected to the output of the sensor 1850 aswell as the optical source 105 and the spectral feature selection system130 that is optically coupled to the pulsed light beam 110. The controlsystem 185 measures a property of the spatial components 1874, andanalyzes these measured properties to calculate an estimate of thespectral feature of the pulsed light beam 110. The control system 185can perform the measurement, analysis, and calculation for each pulse ofthe light beam 110 or for a set of pulses of the light beam 110. Theproperty of the spatial components 1874 that is measured can be a scalarquantity (which is fully described by a magnitude or numerical value)alone or a vector quantity (which is fully described by both a magnitudeand a direction). An example of a scalar property is a metric such asthe width W of the optical spectrum 1872. In this example, it ispossible that the entire shape of the optical spectrum 1872 is not knownbut the metric is known and this is used to estimate the shape of theoptical spectrum 1872. An example of a vector property is the entirewaveform that describes the optical spectrum 1872. In this example, onecan calculate any metric from the entire spectrum and the by having theentire spectrum, one can make a more accurate calculation. The sensedspatial components can be measured for a range of one or more pulses ofthe pulsed light beam 110′.

The control system 185 can measure as the property the width W of theoptical spectrum 1872. The width W of the optical spectrum 1872 canprovide an estimate of the bandwidth (the spectral feature) of the lightbeam 110′. In some implementations, the width W of the optical spectrum1872 is determined using a metric such as the FWXM (full width of thespectrum 1872 at a fraction X of the maximum peak intensity). In otherimplementations, the width W of the optical spectrum 1872 is determinedusing a metric such as EY (the width of the spectrum that contains afraction Y of the integrated spectral intensity). Other metrics aresuitable for measuring the property of the optical spectrum 1872.

Referring to FIG. 19 , in some implementations, the optical source 105is an exemplary optical source 1905. The optical source 1905 is a pulsedlaser source that produces a pulsed laser beam as the light beam 110.The optical source 1905 is a two-stage laser system that includes amaster oscillator (MO) 1900 that provides the seed light beam 1910A to apower amplifier (PA) 1910. The master oscillator 1900 typically includesa gain medium in which amplification occurs and an optical feedbackmechanism such as an optical resonator. The power amplifier 1910typically includes a gain medium in which amplification occurs whenseeded with the seed laser beam from the master oscillator 1900. Thepower amplifier 1910 can be a power ring amplifier (PRA), which isdesigned as a regenerative ring resonator. In this case, enough opticalfeedback can be provided from the ring design. The spectral featureselection apparatus 130 receives the light beam 110A from the masteroscillator 1900 to enable fine tuning of spectral parameters such as thecenter wavelength and the bandwidth of the light beam 110A at relativelylow output pulse energies. The power amplifier 1910 receives the lightbeam 1910A from the master oscillator 1900 and amplifies this output toattain the necessary power for output to use in photolithography.

In some implementations, the master oscillator 1900 includes a dischargechamber having two elongated electrodes, a laser gas that serves as thegain medium, and a fan circulating the gas between the electrodes. Alaser resonator is formed between the spectral feature selectionapparatus 130 on one side of the discharge chamber, and an outputcoupler 1915 on a second side of the discharge chamber to output theseed light beam 1910A to the power amplifier 1910.

In other implementations, the master oscillator 1900 includes as thegain medium, a solid state material. Solid state media that can be usedinclude crystals or glasses doped with rare earth or transition metalions, or semiconductor lasers. A master oscillator 1900 using a solidstate gain medium generates the seed light beam 1910A. The solid stategain medium can be optically pumped with a flash lamp or an arc lamp, orusing a laser diode or a titanium (Ti) sapphire (Ti:Sapphire) laser.

An exemplary solid state gain medium can be neodymium-doped yttriumaluminum garnet (Nd:YAG), neodymium doped yttrium lithium fluoride(Nd:YLF), or Ti:Sapphire. A solid state gain medium is capable ofproducing a single mode output, which is highly temporally (andspatially) coherent and also has a narrow bandwidth. The seed light beam1910A that is output from the solid state gain medium of the masteroscillator 1900 may be at a wavelength that is not the desiredwavelength (for example, it could be outside of the DUV wavelengthrange). In this case, the seed light beam 1910A can be directed throughone or more wavelength conversion elements in order to ensure that thewavelength of the seed light beam 1910A directed to the power amplifier1910 is at the desired DUV wavelength. For example, if the seed lightbeam 1910A output from the solid state gain medium within the masteroscillator 1900 is at a wavelength of about 773.6 nm (for example, aswould be for a Ti:Sapphire gain medium), then the seed light beam 1910Acould be directed through two wavelength conversion elements to convertthe wavelength to about 193.4 nm. The wavelength conversion element orelements can use a non-linear optics technique, such as sum frequencygeneration, to convert the wavelength into the desired wavelength.

The high coherence properties of the solid state gain medium of themaster oscillator 1900 can be addressed using the phase modulator system145, which can be used to reduce the coherence (both temporal andspatial) of the seed light beam 1910A produced by such a masteroscillator 1900. Moreover, the phase modulator system 145 also has theeffect of increasing the bandwidth of the seed light beam 1910A; as thetemporal coherence of the seed light beam 1910A is reduced, thebandwidth of the seed light beam 1910A is increased. Accordingly, thephase modulator system 145 can be used to both increase the bandwidth ofthe seed light beam 1910A and also to reduce the temporal coherence ofthe seed light beam 1910A.

The optical source 1905 can also include another spectral featuremetrology module (such as a line center analysis module or LAM) 1920that receives an output from the output coupler 1915, and one or morebeam modification optical systems 1925 that modify the size and/or shapeof the beam as needed. The spectral feature metrology module 1920 is apart of the metrology system 170, and is an example of one type ofmeasurement system that can be used to measure the wavelength (forexample, the center wavelength) of the seed light beam.

The power amplifier 1910 includes a power amplifier discharge chamber,and if it is a regenerative ring amplifier, the power amplifier alsoincludes a beam reflector or beam turning device 1930 that reflects thelight beam back into the discharge chamber to form a circulating path.The power amplifier discharge chamber includes a pair of elongatedelectrodes, a laser gas that serves as the gain medium, and a fan forcirculating the gas between the electrodes. The seed light beam 1910A isamplified by repeatedly passing through the power amplifier 1910. Thebeam modification optical system 1925 provides a way (for example, apartially-reflecting mirror) to in-couple the seed light beam 1910A andto out-couple a portion of the amplified radiation from the poweramplifier to form the output light beam 110.

The laser gas used in the discharge chambers of the master oscillator1900 and the power amplifier 1910 can be any suitable gas for producinga laser beam around the required wavelengths and bandwidth. For example,the laser gas can be argon fluoride (ArF), which emits light at awavelength of about 193 nm, or krypton fluoride (KrF), which emits lightat a wavelength of about 248 nm.

The spectral feature metrology module 1920 monitors the wavelength ofthe output (the light beam 1910A) of the master oscillator 1900. Thespectral feature metrology module 1920 can be placed at other locationswithin the optical source 1905, or it can be placed at the output of theoptical source 1905.

The repetition rate of the pulses produced by the power amplifier 1910is determined by the repetition rate at which the master oscillator 1900is controlled by the control system 185, under the instructions from thecontroller 140 in the photolithography exposure apparatus 115. Therepetition rate of the pulses output from the power amplifier 1910 isthe repetition rate seen by the photolithography exposure apparatus 115.

As discussed above, it is possible to control the bandwidth bothcoarsely and finely using only optical elements. On the other hand, itis possible to control the bandwidth in a fine and narrow range, andrapidly, by controlling a differential timing between the activation ofthe electrodes within the master oscillator 1900 and the power amplifier1910 while controlling the bandwidth in a coarse and wide range byadjusting the angle of a prism within the spectral feature selectionsystem 130.

Referring to FIG. 20 , in some implementations, the spectral featureselection apparatus 130 includes a set of optical features or components2000, 2005, 2010, 2015, 2020 arranged to optically interact with thepulsed light beam 110A and a control module 2050 that includeselectronics in the form of any combination of firmware and software. Theoptical components 2000, 2005, 2010, 2015, 2020 can be configured toprovide a coarse spectral feature adjustment system; and, if theadjustment of such components is rapid enough, it can be configured toprovide a fine spectral feature adjustment system. Although not shown inFIG. 20 , it is possible for the spectral feature selection apparatus130 to include other optical features or other non-optical features forproviding fine spectral feature control.

The control module 2050 is connected to one or more actuation systems2000A, 2005A, 2010A, 2015A, 2020A physically coupled to respectiveoptical components 2000, 2005, 2010, 2015, 2020. The optical componentsof the apparatus 130 include a dispersive optical element 2000, whichcan be a grating, and a beam expander 2001 made of a set of refractiveoptical elements 2005, 2010, 2015, 2020, which can be prisms. Thegrating 2000 can be a reflective grating that is designed to disperseand reflect the light beam 110A; accordingly, the grating 2000 is madeof a material that is suitable for interacting with a pulsed light beam110A having a wavelength in the DUV range. Each of the prisms 2005,2010, 2015, 2020 is a transmissive prism that acts to disperse andredirect the light beam 110A as it passes through the body of the prism.Each of the prisms can be made of a material (such as, for example,calcium fluoride) that permits the transmission of the wavelength of thelight beam 110A. Although four refractive optical elements 2005, 2010,2015, 2020 are shown, it is possible for fewer than four or more thanfour to be used in the beam expander 2001.

The pulsed light beam 110A enters the apparatus 130 through an aperture2055, and then travels through the prism 2020, the prism 2010, and theprism 2005, in that order, prior to impinging upon a diffractive surface2002 of the grating 2000. With each passing of the beam 110A through aconsecutive prism 2020, 2015, 2010, 2005, the light beam 110A isoptically magnified and redirected (refracted at an angle) toward thenext optical component. The light beam 110A is diffracted and reflectedfrom the grating 2000 back through the prism 2005, the prism 2010, theprism 2015, and the prism 2020, in that order, prior to passing throughthe aperture 2055 as the light beam 110A exits the apparatus 130. Witheach passing through the consecutive prisms 2005, 2010, 2015, 2020 fromthe grating 2000, the light beam 110A is optically compressed as ittravels toward the aperture 2055.

The rotation of a prism (which can be any one of prisms 2005, 2010,2015, 2020) of the beam expander 2001 changes an angle of incidence atwhich the light beam 110A impinges upon the entrance surface of thatrotated prism. Moreover, two local optical qualities, namely, an opticalmagnification and a beam refraction angle, of the light beam 110Athrough that rotated prism are functions of the angle of incidence ofthe light beam 110A impinging upon the entrance surface of that rotatedprism. The optical magnification of the light beam 110A through theprism is the ratio of a transverse width of the light beam 110A exitingthat prism to a transverse width of the light beam 110A entering thatprism.

A change in the local optical magnification of the light beam 110A atone or more of the prisms within the beam expander 2001 causes anoverall change in the optical magnification OM 2065 of the light beam110A through the beam expander 2001. The optical magnification OM 2065of the light beam 110A through the beam expander 2001 is the ratio ofthe transverse width Wo of the light beam 110A exiting the beam expander2001 to a transverse width Wi of the light beam 110A entering the beamexpander 2001. Additionally, a change in the local beam refraction anglethrough one or more of the prisms within the beam expander 2001 causesan overall change in an angle of incidence of 2062 of the light beam110A at the surface 2002 of the grating 2000.

The wavelength of the light beam 110A can be adjusted by changing theangle of incidence 2062 at which the light beam 110A impinges upon thediffractive surface 2002 of the grating 2000. The bandwidth of the lightbeam 110A can be adjusted by changing the optical magnification 2065 ofthe light beam 110.

The apparatus 130 is designed to adjust the wavelength of the light beam110A that is produced within the resonator or resonators of the opticalsource 105 by adjusting an angle 2062 of incidence of at which the lightbeam 110A impinges upon the diffractive surface 2002 of the grating2000. Specifically, this can be done by rotating one or more of theprisms 2005, 2010, 2015, 2020 and the grating 2000 to thereby adjust theangle of incidence 2062 of the light beam 110A.

Moreover, the bandwidth of the light beam 110A that is produced by theoptical source 105 is adjusted by adjusting the optical magnification OM2065 of the light beam 110A. Thus, the bandwidth of the light beam 110Acan be adjusted by rotating one or more of the prisms 2005, 2010, 2015,2020, which causes the optical magnification 2065 of the light beam 110Ato change. Because the rotation of a particular prism causes a change inboth the local beam refraction angle and the local optical magnificationat that prism, the control of wavelength and bandwidth are coupled inthis design.

Additionally, the bandwidth of the light beam 110A is relativelysensitive to the rotation of the prism 2020 and relatively insensitiveto rotation of the prism 2005. This is because any change in the localoptical magnification of the light beam 110A due to the rotation of theprism 2020 is multiplied by the product of the change in the opticalmagnification in the other prisms 2015, 2010, and 2005 because thoseprisms are between the rotated prism 2020 and the grating 2000, and thelight beam 110A must travel through these other prisms 2015, 2010, 2005after passing through the prism 2020. On the other hand, the wavelengthof the light beam 110A is relatively sensitive to the rotation of theprism 2005 and relatively insensitive to the rotation of the prism 2020.

For example, in order to change the bandwidth without changing thewavelength, the optical magnification 2065 should be changed withoutchanging the angle of incidence 2062, and this can be achieved byrotating the prism 2020 by a large amount and rotating the prism 2005 bya small amount.

The control module 2050 is connected to one or more actuation systems2000A, 2005A, 2010A, 2015A, 2020A that are physically coupled torespective optical components 2000, 2005, 2010, 2015, 2020. Although anactuation system is shown for each of the optical components it ispossible that some of the optical components in the apparatus 130 areeither kept stationary or are not physically coupled to an actuationsystem. For example, in some implementations, the grating 2000 can bekept stationary and the prism 2015 can be kept stationary and notphysically coupled to an actuation system.

Each of the actuation systems 2000A, 2005A, 2010A, 2015A, 2020A includesone or more actuators that are connected to its respective opticalcomponents. The adjustment of the optical components causes theadjustment in the particular spectral features (the wavelength and/orbandwidth) of the light beam 110A. The control module 2050 receives acontrol signal from the control system 185, the control signal includingspecific commands to operate or control one or more of the actuationsystems. The actuation systems can be selected and designed to workcooperatively.

Each of the actuators of the actuation systems 2000A, 2005A, 2010A,2015A, 2020A is a mechanical device for moving or controlling therespective optical component. The actuators receive energy from themodule 2050, and convert that energy into some kind of motion impartedto the respective optical component. For example, the actuation systemscan be any one of force devices and rotation stages for rotating one ormore of prisms of a beam expander. The actuation systems can include,for example, motors such as stepper motors, valves, pressure-controlleddevices, piezoelectric devices, linear motors, hydraulic actuators,voice coils, etc.

The grating 2000 can be a high blaze angle Echelle grating, and thelight beam 110A incident on the grating 2000 at any angle of incidence2062 that satisfies a grating equation will be reflected (diffracted).The grating equation provides the relationship between the spectralorder of the grating 2000, the diffracted wavelength (the wavelength ofthe diffracted beam), the angle of incidence 2062 of the light beam 110Aonto the grating 2000, the angle of exit of the light beam 110Adiffracted off the grating 2000, the vertical divergence of the lightbeam 110A incident onto the grating 2000, and the groove spacing of thediffractive surface of the grating 2000. Moreover, if the grating 2000is used such that the angle of incidence 2062 of the light beam 110Aonto the grating 2000 is equal to the angle of exit of the light beam110A from the grating 2000, then the grating 2000 and the beam expander(the prisms 2005, 2010, 2015, 2020) are arranged in a Littrowconfiguration and the wavelength of the light beam 110A reflected fromthe grating 2000 is the Littrow wavelength. It can be assumed that thevertical divergence of the light beam 110A incident onto the grating2000 is near zero. To reflect the nominal wavelength, the grating 2000is aligned, with respect to the light beam 110A incident onto thegrating 2000, so that the nominal wavelength is reflected back throughthe beam expander (the prisms 2005, 2010, 2015, 2020) to be amplified inthe optical source 105. The Littrow wavelength can then be tuned overthe entire gain bandwidth of the resonators within optical source 105 byvarying the angle of incidence 2062 of the light beam 110A onto thegrating 2000.

Each of the prisms 2005, 2010, 2015, 2020 is wide enough along thetransverse direction of the light beam 110A so that the light beam 110Ais contained within the surface at which it passes. Each prism opticallymagnifies the light beam 110A on the path toward the grating 2000 fromthe aperture 2055, and therefore each prism is successively larger insize from the prism 2020 to the prism 2005. Thus, the prism 2005 islarger than the prism 2010, which is larger than the prism 2015, and theprism 2020 is the smallest prism.

As discussed above, the bandwidth of the light beam 110A is relativelysensitive to the rotation of the prism 2020 and relatively insensitiveto rotation of the prism 2005. This is because any change in the localoptical magnification of the light beam 110A due to the rotation of theprism 2020 is multiplied by the product of the change in the opticalmagnification in the other prisms 2015, 2010, and 2005 because thoseprisms are between the rotated prism 2020 and the grating 2000, and thelight beam 110A must travel through these other prisms 2015, 2010, 2005after passing through the prism 2020. On the other hand, the wavelengthof the light beam 110A is relatively sensitive to the rotation of theprism 2005 and relatively insensitive to the rotation of the prism 2020.Thus, the wavelength can be coarsely changed by rotating the prism 2005,and the prism 2020 can be rotated (in a coarse manner). The angle ofincidence 2062 of the light beam 110A is changed due to the rotation ofthe prism 2005 and the rotation of the prism 2020 offset the change inmagnification caused by the rotation of the prism 2005. The prism 2020can be used for coarse, large range, and slow bandwidth control. Bycontrast, the bandwidth can be controlled in a fine and narrow range andeven more rapidly by controlling the prism 2010.

Referring to FIG. 21 , details about the control system 185 are providedthat relate to the aspects of the system and method described herein.The control system 185 can include other features not shown in FIG. 21 .In general, the control system 185 includes one or more of digitalelectronic circuitry, computer hardware, firmware, and software.

The control system 185 includes memory 2100, which can be read-onlymemory and/or random access memory. Storage devices suitable fortangibly embodying computer program instructions and data include allforms of non-volatile memory, including, by way of example,semiconductor memory devices, such as EPROM, EEPROM, and flash memorydevices; magnetic disks such as internal hard disks and removable disks;magneto-optical disks; and CD-ROM disks. The control system 185 can alsoinclude one or more input devices 2105 (such as a keyboard, touchscreen, microphone, mouse, hand-held input device, etc.) and one or moreoutput devices 2110 (such as a speaker or a monitor).

The control system 185 includes one or more programmable processors2115, and one or more computer program products 2120 tangibly embodiedin a machine-readable storage device for execution by a programmableprocessor (such as the processors 2115). The one or more programmableprocessors 2115 can each execute a program of instructions to performdesired functions by operating on input data and generating appropriateoutput. Generally, the processor 2115 receives instructions and datafrom memory 2100. Any of the foregoing may be supplemented by, orincorporated in, specially designed ASICs (application-specificintegrated circuits).

The control system 185 includes, among other components, a spectralfeature analysis module 2125, a lithography analysis module 2130, adecision module 2135, a phase modulation module 2140, a light sourceactuation module 2150, a lithography actuation module 2155, and a beampreparation actuation module 2160. Each of these modules can be a set ofcomputer program products executed by one or more processors such as theprocessors 2115. Moreover, any of the modules 2125, 2130, 2135, 2140,2150, 2155, 2160 can access data stored within the memory 2100.

The spectral feature analysis module 2125 receives the output from themetrology system 170. The phase modulation module 2140 interfaces withthe phase modulator system 145, to control the signal provided to thevoltage source 1257 for controlling the electrodes 1248, 1249 of thephase modulator system 145. The lithography analysis module 2130receives information from the lithography controller 140 of thephotolithography exposure apparatus 115. The decision module 2135receives the outputs from the analyses modules (such as the modules 2125and 2130) and determines which actuation module or modules (such as thephase modulation module 2140 or the light source actuation module 2150)need to be activated based on the outputs from the analyses modules.

The light source actuation module 2150 is connected to one or more ofthe optical source 105 and the spectral feature selection apparatus 130.The lithography actuation module 2155 is connected to thephotolithography exposure apparatus 115, and specifically to thelithography controller 140. The beam preparation actuation module 2160is connected to one or more components of the beam preparation system112. Connections between modules within the control system 185 andbetween modules within the control system 185 and other components ofthe photolithography system 100 can be wired or wireless.

While only a few modules are shown in FIG. 21 , it is possible for thecontrol system 185 to include other modules. Additionally, although thecontrol system 185 is represented as a box in which all of thecomponents appear to be co-located, it is possible for the controlsystem 185 to be made up of components that are physically remote fromeach other. For example, the light source actuation module 2150 can bephysically co-located with the optical source 105 or the spectralfeature selection apparatus 130.

In general, the control system 185 receives at least some informationabout the light beam 110 from the metrology system 170, and the spectralfeature analysis module 2125 performs an analysis on the information todetermine how to adjust one or more spectral features (for example, thebandwidth) of the light beam 110 supplied to the photolithographyexposure apparatus 115. Based on this determination, the control system185 sends signals to the spectral feature selection apparatus 130 and/orthe optical source 105 to control operation of the optical source 105via the control module 2050. In general, the spectral feature analysismodule 2125 performs the analysis needed to estimate one or morespectral features (for example, the wavelength and/or the bandwidth) ofthe light beam 110. The output of the spectral feature analysis module2125 is an estimated value of the spectral feature that is sent to thedecision module 2135.

The spectral feature analysis module 2125 includes a comparison blockconnected to receive the estimated spectral feature and also connectedto receive a spectral feature target value. In general, the comparisonblock outputs a spectral feature error value that represents adifference between the spectral feature target value and the estimatedvalue. The decision module 2135 receives the spectral feature errorvalue and determines how best to effect a correction to the system 100in order to adjust the spectral feature. Thus, the decision module 2135sends a signal to the light source actuation module 2150, whichdetermines how to adjust the spectral feature selection apparatus 130(or the optical source 105) based on the spectral feature error value.The output of the light source actuation module 2150 includes a set ofactuator commands that are sent to the spectral feature selectionapparatus 130. For example, the light source actuation module 2150 sendsthe commands to the control module 2050, which is connected to theactuation systems within the exemplary apparatus 130 shown in FIG. 20 .

Additionally, the lithography analysis module 2130 can receiveinstructions from the lithography controller 140 of the photolithographyexposure apparatus 115 for example, to change one or more spectralfeatures of the pulsed light beam 110 or to change a pulse repetitionrate of the light beam 110. The lithography analysis module 2130performs an analysis on these instructions to determine how to adjustthe spectral features and sends the results of the analysis to thedecision module 2135. The control system 185 causes the optical source105 to operate at a given repetition rate, which is the rate at whichthe pulses are produced. More specifically, the photolithographyexposure apparatus 115 sends a trigger signal to the optical source 105(by way of the control system (through the lithography analysis module2130) for every pulse (that is, on a pulse-to-pulse basis) and the timeinterval between those trigger signals can be arbitrary, but when thephotolithography exposure apparatus 115 sends trigger signals at regularintervals then the rate of those signals is a repetition rate. Therepetition rate can be a rate requested by the photolithography exposureapparatus 115.

The phase modulation module 2140 can receive instructions (for example,from the decision module 2135) on how to modify the signal provided tothe voltage source 1257 for controlling the electrodes 1248, 1249 of thephase modulator system 145. By adjusting the signal provided to thevoltage source 1257, the frequency of modulation of the optical phase ofthe pulse is adjusted.

Referring to FIG. 22 , a procedure 2200 is performed by thephotolithography system 100. The light beam 110 made up of pulses isproduced (2205). Each pulse has a wavelength in the deep ultravioletrange, and each pulse having a first temporal coherence defined by afirst temporal coherence length. Each pulse is defined by a pulseduration. The pulse duration can be defined as the time during which thepower of the pulse remains continuously above a percentage (for examplea half) of its maximum value.

For one or more of these pulses, the optical phase of the pulse ismodulated over the pulse duration of the pulse to produce a modifiedpulse (2210). The modified pulse has a second temporal coherence definedby a second temporal coherence length that is less than the firsttemporal coherence length of the pulse (that is, the unmodified pulse).For example, the optical phase is modulated over the pulse duration of apulse to produce the modified pulse (2210) by convoluting the spectrumof the electric field of the pulse by a Fourier transform relating tomodulating the optical phase over the pulse duration of the pulse.

The optical phase of the pulse can be modulated (2210) by modulating arefractive index of a material through which the pulse is directed. Forexample, the optical phase of the pulse 1205 is modulated by modulatingthe refractive index of the electro-optic crystal 1247 through which thepulse 1205 propagates. The optical phase can be modulated at frequenciesthat lie within a frequency range.

The optical phase of the pulse can be modulated (2210) by randomizingthe optical phase over the pulse duration of the pulse. The opticalphase of the pulse can be modulated (2210) by changing the position ofpoints in time on the electric waveform of the pulse.

The optical pulse is associated with a waveform, the waveform beingrepresented by points in time, and the optical phase of the pulse can bemodulated (2210) by applying a different temporal delay to differentpoints of the waveform. The different temporal delay is applied todifferent points of the waveform by passing the optical pulse through amedium (or material such as the electro-optic crystal 1247) and varyingan index of refraction of the medium as the pulse passes through themedium. The amplitude of the modulation of the optical phase can varyrandomly over the pulse duration of the pulse.

A light beam of pulses is formed from one or more of the modified pulses(2215), and the formed light beam of pulses is directed toward the wafer120 within the photolithography exposure apparatus 115 (2220).

The optical phase is modulated (2210) over the pulse duration of a pulseto produce the modified pulse to thereby reduce a dynamic speckle (whichis also referred to as dynamic speckle contrast) of the light beam ofpulses directed toward the substrate.

The light beam made up of pulses can be produced by producing a seedlight beam 1910A made up of pulses. The light beam 110 made up ofamplified pulses can be produced by optically amplifying the pulses ofthe seed light beam 1910A by repeatedly passing the pulses of the seedlight beam through a resonator (for example, within the power amplifier1910). The optical phase can be modulated over the pulse duration of apulse by modulating the optical phase over the pulse duration of anamplified pulse to produce the modified pulse. The optical phase can bemodulated over the pulse duration of a pulse by modulating the opticalphase over the pulse duration of a pulse of the seed light beam 1910A toproduce the modified pulse. The light beam 110 made up of amplifiedpulses can be produced by optically amplifying the modified pulses.

The procedure 2200 can also include reducing a bandwidth of the pulsesof the light beam before modulating the optical phase over the pulseduration of each pulse to produce the modified pulse. Modulating theoptical phase over the pulse duration of a pulse causes the bandwidth ofthe pulse to increase but remain below a target bandwidth. Thisphenomenon (in which the bandwidth of the modified pulse increases asthe frequency of the optical phase modulation is increased) can be usedto adjust the bandwidth of the pulse that is directed toward the wafer120 by adjusting the rate or frequency with which the optical phase ofthat pulse is modulated.

The procedure 2200 can also include increasing a duration of the pulsesin the light beam that are directed toward the wafer 120. The durationof the pulses in the light beam directed toward the wafer 120 can beincreased by: splitting the amplitude of each pulse of the light beaminto split portions, introducing temporal delays among these splitportions to produce temporally-delayed portions of the pulse, and thenrecombining these temporally-delayed portions of the pulse to provide atemporally stretched pulse of the light beam. Moreover, the opticalphase can be modulated (2210) over the pulse duration of a pulse toproduce the modified pulse by modulating the optical phase over thepulse duration of one or more split portions of the pulse. The bandwidthof the modified pulse of the light beam can be greater than thebandwidth of the pulse of the light beam prior to modulation. Referringalso to FIG. 23 , the procedure 2200 can also include an additionalprocedure 2300 for selecting a frequency range at which the opticalphase over the pulse duration of a pulse is modulated. Basically, theprocedure 2300 operates on the principle that the modulation frequencies(or the maximum allowed modulation frequency) can be selected bydetermining target modulation frequencies that would produce a bandwidththat is within a range of a target bandwidth of the modified pulse; andthen maintaining the maximum allowed modulation frequency below thedetermined target modulation frequency to thereby ensure that themodulation frequencies are within the target modulation frequencies andto thereby maintain the bandwidth of the modified pulse within a rangeof the target bandwidth. The procedure 2300 includes measuring acharacteristic of a test pulse (2305). A test pulse is either the pulsehaving the first temporal coherence (prior to being modulated) or themodified pulse having the second temporal coherence. The characteristicof the test pulse that is measured can be a bandwidth of the test pulse.The measured characteristic is received (2310) and the control system185 determines whether the bandwidth of the modified pulse is within arange of the target bandwidth based on the received characteristic(2315). If the control system 185 determines that the bandwidth of themodified pulse is outside the range of the target bandwidth, then themaximum allowed frequency at which the optical phase is modulated isadjusted (2320). By adjusting the maximum allowed frequency at which theoptical phase is modulated, it is thereby possible to adjust thebandwidth of the modified pulse. For example, the phase modulationmodule 2140 could adjust the control signal provided to the voltagesource 1257 of the phase modulator system 145 to adjust the maximumallowed frequency of modulation. And, the control signal can be adjustedby adjusting a signal filter through which the control signal isdirected.

The procedure 2300 can be performed for each pulse of the light beam110.

Other implementations are within the scope of the following claims.

What is claimed is:
 1. An apparatus comprising: an optical sourceconfigured to produce a light beam made up of pulses and having awavelength in the deep ultraviolet range, each pulse having a firsttemporal coherence defined by a first temporal coherence length and eachpulse being defined by a pulse duration; a coherence reduction system inthe path of the light beam of pulses and configured to, for each of thepulses in the light beam, modulate an optical phase over the pulseduration of the pulse to produce a modified pulse having a secondtemporal coherence defined by a second temporal coherence length that isless than the first temporal coherence length of the pulse; and a beamdirecting apparatus in the path of a light beam of pulses formed fromthe modified pulses, the beam directing apparatus configured to directthe light beam of pulses formed from the modified pulses toward asubstrate within a lithography exposure apparatus.
 2. The apparatus ofclaim 1, wherein the second temporal coherence length is between 50-95%of the first temporal coherence length.
 3. The apparatus of claim 1,wherein the optical source comprises: a first stage light sourceconfigured to produce a seed light beam made up of seed light beampulses; and a second stage optical amplifier configured to receive theseed light beam pulses and produce a light beam made up of amplifiedpulses.
 4. The apparatus of claim 3, wherein the first stage lightsource includes a solid state gain medium.
 5. The apparatus of claim 1,wherein the optical source comprises a solid state gain medium.
 6. Theapparatus of claim 1, wherein the coherence reduction system includes atwo-dimensional array of phase modulators positioned within a beamhomogenizer.
 7. The apparatus of claim 6, wherein the two-dimensionalarray of phase modulators is also configured to, for each pulse, reducea spatial coherence of the pulse so that the modified pulse has a secondspatial coherence that is less than the spatial coherence of the pulse.8. The apparatus of claim 1, further comprising an optical temporalpulse stretcher configured to increase a duration of the modifiedpulses.
 9. The apparatus of claim 1, wherein the coherence reductionsystem comprises a Pockels cell including a medium through which thelight beam of pulses passes, and modulating the optical phase over thepulse duration of the pulse comprises modulating an index of refractionof the medium of the Pockels cell.
 10. The apparatus of claim 1, whereinthe coherence reduction system comprises a single phase modulator. 11.The apparatus of claim 1, wherein the coherence reduction system isconfigured to produce, for each pulse of the light beam, the modifiedlight beam pulse having a bandwidth that is greater than a bandwidth ofthe light beam pulse.
 12. The apparatus of claim 1, wherein thecoherence reduction system comprises a two-dimensional array of phasemodulators optically arranged in parallel with each other.
 13. Theapparatus of claim 12, wherein the coherence reduction system is betweentwo lenslet arrays of a beam homogenizer, wherein each phase modulatoraligns with a pair of lenslets.
 14. The apparatus of claim 12, whereinthe coherence reduction system is near a pair of lenslet arrays of abeam homogenizer, wherein each phase modulator aligns with a pair oflenslets.
 15. The apparatus of claim 1, further comprising a controlsystem in communication with the coherence reduction system, the controlsystem configured to: determine whether a bandwidth of the modifiedpulse is within a range of a target bandwidth; and if it is determinedthat the bandwidth of the modified pulse is outside the range of thetarget bandwidth, then adjust a frequency at which the optical phaseover the pulse duration of the pulse that produces the modified pulse ismodulated.
 16. A photolithography exposure apparatus comprising: anoptical source configured to produce a light beam made up of pulses andhaving a wavelength in the deep ultraviolet range, each pulse having afirst temporal coherence defined by a first temporal coherence lengthand each pulse being defined by a pulse duration; an optical arrangementcomprising an illumination module, a reticle, and a projection stagealigned along an optical axis with a wafer stage; and a coherencereduction system in the path of the light beam of pulses and configuredto, for each of the pulses in the light beam, modulate an optical phaseover the pulse duration of the pulse to produce a modified pulse havinga second temporal coherence defined by a second temporal coherencelength that is less than the first temporal coherence length of thepulse; wherein a wafer positioned at the wafer stage is configured toreceive a light beam of pulses formed from the modified pulses.
 17. Thephotolithography exposure apparatus of claim 16, wherein the coherencereduction system is within the optical arrangement.
 18. Thephotolithography exposure apparatus of claim 16, wherein the coherencereduction system is within the optical source.
 19. The photolithographyexposure apparatus of claim 16, further comprising an optical temporalpulse stretcher configured to increase a duration of pulses that passthrough it, the optical temporal pulse stretcher in the path of thelight beam of pulses between the optical source and the opticalarrangement.
 20. The photolithography exposure apparatus of claim 19,wherein the coherence reduction system is within the optical temporalpulse stretcher.